SSG9435BDY -5.3 a, -30 v, r ds(on) 36 m ? p-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g 9435bdysc = dat e code rohs compliant product a suffix of -c specifies halogen free description the SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial -industrial surface mount applications and suited for low volta ge applications such as dc/dc converters. features simple drive requirement lower on-resistance fast switching marking package information package mpq leader size sop-8 3k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25c i d -5.3 a t a = 70c -4.7 a pulsed drain current 2 i dm -20 a total power dissipation 1 p d 2.5 w linear derating factor 0.02 w / c operating junction & storage temperature t j , t stg -55~150 c thermal resistance ratings thermal resistance junction-ambient 1 (max.) r ja 50 c / w sop-8 ref. millimeter ref. millimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ.
SSG9435BDY -5.3 a, -30 v, r ds(on) 36 m ? p-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250 a gate threshold voltage v gs(th) -1.0 - -2.5 v v ds =v gs , i d = -250 a forward transconductance 2 g fs - 5 - s v ds = -5v, i d = -5.3a gate-source leakage current i gss - - 100 na v gs = 20v dreain-source leakage current i dss - - -1 a v ds = -30v, v gs =0 static drain-source on-resistance 2 r ds(on) - - 36 m v gs = -10v, i d = -5.3a - - 55 v gs = -4.5v, i d = -4.2a total gate change 2 q g - 9.8 - nc i d = -6a v ds = -20v v gs = -4.5v gate-source charge q gs - 2.2 - gate-drain(miller) change q gd - 3.4 - turn-on delay time 2 t d(on) - 16.4 - ns v ds = -24v i d = -1a v gs = -10v r g =3.3 rise time t r - 20.2 - turn-off delay time t d(off) - 55 - fall time t f - 10 - input capacitance c iss - 930 - pf v gs =0 v ds = -15v f=1.0mhz output capacitance c oss - 148 - reverse transfer capacitance c rss - 115 - source -drain diode forward on voltage 2 v sd - -0.84 -1.2 v i s = -1.7a, v gs =0v note: 1. surface mounted on 1 in 2 copper pad of fr4 board;125 /w when mounted on min. copper pad. 2. pulse width limited by max. junction temperatur e.
SSG9435BDY -5.3 a, -30 v, r ds(on) 36 m ? p-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
SSG9435BDY -5.3 a, -30 v, r ds(on) 36 m ? p-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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